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SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES
Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124.
D K F F D A H
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
C
G
J B E
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC ICP PC PC* Tj Tstg RATING 60 50 6 3 6 500 1 150 -55 0.8t) 150 UNIT V V V A A mW W
1
2
3
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
SOT-89
Marking
h FE Rank Lot No.
* : Package mounted on ceramic substrate(250mm2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE (1) Classification A:100 200, ICBO IEBO
)
TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 VCE=2V, IC=3A IC=2A, IB=100 IC=2A, IB=100 VCE=10V, IC=50 VCB=10V, f=1
PW=20s DC < 1% = INPUT
SYMBOL
MIN. 100 35 -
Y
TYP. 0.19 0.94 150 25 70 650 35 MAX. 1 1 400 0.5 1.2 nS V V
Type Name
UNIT.
hFE(1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf B:140 280,
, IE=0
I B1 R8 I B2 25
-
VR 50
100 -5V 10IB1=-10I B2 =I C =1A
470 25V
-
C:200
400
2001. 12. 6
Revision No : 4
1/3
KTD1624
I C - V CE
5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 0 0.4 0.8 1.2 1.6 COLLECTOR CURRENT I C (A)
100mA 80mA 60mA 40mA 20mA 10mA 5mA
I C - V BE
3.2 2.8 2.4 2.0
Ta=7 5C 25 C -25 C
VCE =2V
1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6
I B =0
2.0
0.8
1.0
1.2
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE EMITTER VOLTAGE V BE (V)
I C - V CE
2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16
8mA
h FE - I C
1k DC CURRENT GAIN h FE 500 300
VCE =2V
7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0
100 50 30
18
20
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (A)
V BE(sat) - I C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
I C /I B =20
V CE(sat) - I C
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300
I C /I B =20
10 5 3
1 0.5 0.3
Ta=25 C
Ta=-25 C Ta=75 C
100 50 30
Ta=-25 C Ta=75 C Ta=25 C
0.1 0.01
0.03
0.1
0.3
1
3
10
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
2001. 12. 6
Revision No : 4
2/3
KTD1624
C ob - V CB
GAIN-BANDWIDTH PRODUCT f T (MHz) OUTPUW CAPACITANCE C ob (pF) 100 50 30
f=1MHz
f T - IC
1k 500 300
V CE =10V
10 5 3
100 50 30
1 1 3 5 10 30 50 100 200 COLLECTOR BASE VOLTAGE V CB (V)
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
COLLECTOR POWER DISSIPATION PC (W)
P C - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0
2 1 1 MOUNTED ON CERAMIC
SAFE OPERATING AREA
10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03
MOUNTED ON CERAMIC BOARD (250mm 2 x0.8t) Ta=25 C ONE PULSE I CP
SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C
s 1m s m 10 s 0m 10
I C MAX.
D C
O
pe
ra
tio n
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
0.02 0.1
0.3
1
3
10
30
100
COLLECTOR EMITTER VOLTAGE V CE (V)
2001. 12. 6
Revision No : 4
3/3

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